PNP SILICON PLANAR TRANSISTOR

2N4036

TO-39

General Purpose Transistor

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Emitter Voltage

VCEO

65

V

Collector -Base Voltage

VCBO

90

V

Emitter Base Voltage

VEBO

7.0

V

Base Current

IB

0.5

A

Collector Current -Continuous

IC

1.0

A

Power Dissipation @ Tc=25 deg C

PD

5.0

W

Linear Derating Factor

28.6

mW/deg C

Power Dissipation @ Ta=25 deg C

PD

1.0

W

Linear Derating Factor

5.72

mW/deg C

Operating & Storage Junction

Tj, Tstg

-65 to +200

deg C

Temperature Range

Lead Temperature 1/16" from Case

TL

230

deg C

for 10 Seconds

Thermal Resistance

Junction to Case

Rth (j-c)

35

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Emitter Voltage

VCEO

IC=10mA, IB=0

65

-

V

Collector -Base Voltage

VCBO

IC=100uA, IE=0

90

-

-

V

Collector Cut off Current

ICEX

VCE=85V, VBE=1.5V

-

-

0.1

mA

ICBO

VCB=90V, IE=0

-

1.0

uA

Emitter Cut off Current

IEBO

VBE=7V, IC=0

-

10

uA

DC Current Gain

hFE

0.1mA, VCE=10V

20

-

-

IC=150mA, VCE=2V

20

200

IC=150mA, VCE=10V

40

-

140

IC=500mA, VCE=10V

20

-

Collector -Emitter (sat) Voltage

VCE(sat) IC=150mA, IB=15mA

-

0.65

V

Base -Emitter (sat) Voltage

VBE(sat) IC=150mA, IB=15mA

-

1.4

V

Small- Signal Characteristics

Current Gain- High Frequency

lhfel

IC=50mA,VCE=10V, f=20MHz

3.0

-

-

Switching Characteristics

Rise time

tr

IB1=15mA,IC=150mA, VCE=30V

-

70

ns

Sorage time

ts

IB2=15mA,IC=150mA, VCE=30V

-

600

ns

Fall time

tf

IB2=15mA,IC=150mA, VCE=30V

-

100

ns

Turn-on time

ton

IC=150mA, VCE=30V, IB1=IB2=

-

110

ns

Turn-off time

toff

15mA

-

700

ns

Continental Device India Limited

Data Sheet

Page 1 of 2

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company