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2N3905 Datasheet(PDF) 1 Page - Continental Device India Limited |
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2N3905 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 5 page  PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS 2N3905 / 2N3906 TO-92 Plastic Package General Purpose Switching And Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation Ta=25ºC PD Derate Above 25ºC Power Dissipation Ta=60ºC PD Power Dissipation Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg THERMAL RESISTANCE Junction to Case Rth (j-c) Junction to Ambient in free air Rth (j-a) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION 2N3905 Collector Emitter Voltage VCEO IC=1mA, IB=0 >40 Collector Base Voltage VCBO IC=10µA. IE=0 >40 Emitter Base Voltage VEBO IE=10µA, IC=0 >5.0 >5.0 Collector Cut Off Current ICEX VCE=30V, VEB=3V < 50 < 50 Base Cut Off Current IBL VCE=30V, VEB=3V < 50 < 50 DC Current Gain *hFE IC=0.1mA, VCE=1V >30 >60 IC=1mA, VCE=1V >40 >80 IC=10mA, VCE=1V 50-150 100-300 IC=50mA, VCE=1V >30 >60 IC=100mA, VCE=1V >15 >30 Collector Emitter Saturation Voltage *VCE (sat) IC=10mA, IB=1mA < 0.25 < 0.25 IC=50mA, IB=5mA < 0.40 < 0.40 Base Emitter Saturation Voltage *VBE (sat) IC=10mA, IB=1mA 0.65 - 0.85 IC=50mA, IB=5mA < 0.95 < 0.95 *Pulse Condition: =300 µµs, Duty Cycle=2% 2N3905_3906Rev_1 071105E 250 mW 5.0 200 625 1.5 5.0 2N3906 83.3 200 For Lead Free Parts, Device Part # will be Prefixed with "T" VALUE 40 40 UNITS V V 12 -55 to +150 V V 0.65 - 0.85 >40 >40 mW/ºC ºC ºC/W ºC/W V V nA nA V W V mA mW mW/ºC UNITS V V E B C Continental Device India Limited Data Sheet Page 1 of 5 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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