Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

PNP SILICON POWER SWITCHING TRANSISTOR

2N3868

TO-39

Metal Can Package

Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

UNITS

Collector Emitter Voltage

V

Collector Base Voltage

V

Emitter Base Voltage

V

Collector Current - Continuous

A

Peak

A

Base Current

A

W

Derate Above 25ºC

mW/ ºC

W

Derate Above 25ºC

mW/ ºC

Operating And Storage Junction

Temperature Range

ºC

THERMAL CHARACTERISTICS

Junction to Case

ºC/W

Junction to Ambient in free air

ºC/W

DESCRIPTION

SYMBOL

MIN

MAX

UNITS

Collector Emitter Voltage

60

V

Collector Base Voltage

60

V

Emitter Base Voltage

4.0

V

Collector Cut Off Current

1.0

µA

Collector Cut off Current

150

µA

DC Current Gain

35

30

150

20

20

Collector Emitter Saturation Voltage

0.50

V

0.75

V

1.30

V

Base Emitter Saturation Voltage

1.0

V

0.9

1.4

V

2.0

V

*Pulse Test: Pulse Width <300

µµs, Duty Cycle <2%

2N3868Rev031105E

VALUE

60

60

4.0

3.0

10

0.5

6.0

34.3

1.0

5.71

- 65 to +200

SYMBOL

29

175

TEST CONDITION

Continental Device India Limited

Data Sheet

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