e

1

0

5

10

15

20

25

01

234

Input Power (Watts)

f = 960 MHz

Output Power vs. Input Power

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Emitter Voltage

40

Vdc

Collector-Base Voltage

50

Vdc

Emitter-Base Voltage (collector open)

4.0

Vdc

Collector Current (continuous)

5.0

Adc

Total Device Dissipation at Tflange = 25°C

70

Watts

Above 25°C derate by

0.4

W/°C

Storage Temperature Range

T

STG

–40 to +150

°C

Thermal Resistance (Tflange = 70°C)

2.5

°C/W

PTB 20105

20 Watts, 925–960 MHz

Cellular Radio RF Power Transistor

Description

The 20105 is a class AB, NPN, common emitter RF power transistor

intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20

watts minimum output power, it may be used for both CW and PEP

applications. Ion implantation, nitride surface passivation and gold

metallization are used to ensure excellent device reliability. 100% lot

traceability is standard.

CC

- Output Power = 20 W

- Efficiency = 50% Min

Package 20201

20105

LOT

CODE

9/28/98