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2N3250 Datasheet(PDF) 1 Page - Continental Device India Limited |
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2N3250 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page ![]() PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS 2N3250 2N3251 Collector Emitter Voltage VCEO 40 Collector Base Voltage VCBO 50 Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation @ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) Junction to Case Rth (j-c) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION 2N3250 2N3250A UNIT 2N3251 2N3251A Collector Emitter Voltage *VCEO IC=10mA, IB=0 >40 >60 V Collector Base Voltage VCBO IC=10µA, IE=0 >50 >60 V Emitter Base Voltage VEBO IE=10µA, IC=0 >5 V Collector Cutoff Current ICEX VCE=40V, VBE=3V <20 nA Base Cutoff Current IBL VCE=40V, VBE=3V <50 nA DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector Emitter Saturation Voltage *VCE (sat) IC=10mA, IB=1mA 0.25 V IC=50mA, IB=5mA 0.5 V Base Emitter Saturation Voltage *VBE (sat) IC=10mA, IB=1mA 0.6 0.9 V IC=50mA, IB=5mA 1.2 V *Pulse Test: Pulse Width < 300 µµs, Duty Cycle < 2% 2N3250_A_2N3251_ARev_1 311003D DESCRIPTION SYMBOL UNIT 60 2N3250A 2N3251A ºC/W ºC/W 490 150 60 5 mW mW/ ºC V V V mA - 65 to +200 mW/ ºC ºC 2.06 1.2 W 200 360 6.9 Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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