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2N3053 Datasheet(PDF) 1 Page - Continental Device India Limited |
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2N3053 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  NPN SILICON PLANAR TRANSISTOR 2N3053 / 2N3053A TO-39 Metal Can Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N3053 UNIT Collector Emitter Voltage VCEO 40 V Collector Base Voltage VCBO 60 V Emitter Base Voltage VEBO V Collector Current Continuous IC A Power Dissipation at Tc=25ºC PD W Derate Above 25ºC mW/ ºC Operating and Storage Junction Temperature Range Tj, Tstg ºC Lead Temperature 1/16", + 1/32" from Case for 10s TL ºC THERMAL RESISTANCE Junction to Case Rth (j-c) ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION 2N3053 UNIT Collector Emitter Voltage VCEO IC=1mA, IB=0 >40 V Collector Emitter Voltage VCER IC=1mA, RBE=10Ω >50 V Collector Base Voltage VCBO IC=100µA, IE=0 >60 V Emitter Base Voltage VEBO IE=100µA, IC=0 V Collector Cut Off Current ICEX VCE=30V, IE=0, VBE (off)=1.5V <250 nA VCE=60V, IE=0, VBE (off)=1.5V nA Emitter Cut Off Current IEBO VEB=4V, IC=0 nA Base Cut Off Current IBL VCE=60V, IE=0, VBE (off)=1.5V nA DC Current Gain *hFE IC=150mA, VCE=2.5V IC=150mA, VCE=10V Collector Emitter Saturation Voltage *VCE (sat) IC=150mA, IB=15mA <1.4 V Base Emitter Saturation Voltage *VBE (sat) IC=150mA, IB=15mA <1.7 V Base Emitter On Voltage *VBE (on) IC=150mA, VCE=2.5V <1.7 V SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product fT IC=50mA, VCE=10V, f=20MHz MHz Output Capacitance Cob VCB=10V, IE=0, f=140KHz pF Input Capacitance Cib VEB=0.5V, IC=0, f=140KHz pF *Pulse Test: Pulse Width < 300 µµs, Duty Cycle < 2% 2N3053_A Rev_1 040406E 50 - 250 >100 0.7 5.0 28.6 - 65 to +200 +235 35 2N3053A >60 2N3053A 60 80 5.0 >70 >80 <0.3 <1.0 >5.0 <250 <250 <250 >25 0.6 - 1.0 <15 <80 Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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