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PTF10122 Datasheet(PDF) 2 Page - Ericsson |
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PTF10122 Datasheet(HTML) 2 Page - Ericsson |
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2 / 6 page ![]() PTF 10122 2 e Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA V(BR)DSS 65 — — Volts Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V IDSS — — 2.0 mA Gate Threshold Voltage VDS = 10 V, ID = 150 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 2 A gfs — 4.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 237 Watts Above 25°C derate by 1.35 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.74 °C/W Typical Performance 7 8 9 10 11 12 2000 2100 2200 2300 Frequency (MHz) 20 30 40 50 60 70 VDD = 28 V IDQ = 600 mA Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Power (W) Efficiency (%) Gain (dB) Broadband Test Fixture Performance 6 7 8 9 10 11 12 13 14 2100 2125 2150 2175 2200 Frequency (MHz) 0 10 20 30 40 50 VDD = 28 V IDQ = 600 mA POUT = 15 W Gain Return Loss Efficiency @ P-1dB 0 - 5 -10 -15 -20 -25 |
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