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NPT1004 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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NPT1004 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
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2 / 6 page ![]() NPT1004 Page 2 NDS-010 Rev. 4, April 2013 NPT1004 DC Specifications: TC=25°C Symbol Parameter Min Typ Max Units Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS = -8V, ID =16mA) 100 - - V IDLK Drain-Source Leakage Current (VGS = -8V, VDS =60V) - 2 10 mA On Characteristics VT Gate Threshold Voltage (VDS = 28V, ID =16mA) -2.3 -1.8 -1.3 V VGSQ Gate Quiescent Voltage (VDS = 28V, ID =350mA) -2.0 -1.5 -1.0 V RON On Resistance (VGS = 2V, ID =120mA) - 0.25 0.30 W ID Drain Current (VDS = 7V pulsed, 300ms pulse width, 0.2%dutycycle,VGS =2V) 7.5 9.5 - A Absolute Maximum Ratings: Not simultaneous, TC=25°C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage -10 to 3 V PT TotalDevicePowerDissipation(Deratedabove25°C) 40 W qJC ThermalResistance(Junction-to-Case) 4.3 °C/W TSTG Storage Temperature Range -65 to 150 °C TJ Operating Junction Temperature 200 °C HBM HumanBodyModelESDRating(perJESD22-A114) 1B(>500V) MM MachineModelESDRating(perJESD22-A113) M1(>50V) MSL MoistureSensitivityLevel(perIPC/JEDECJ-STD-020):Ratingof3at260°CPackagePeakTemperature |
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