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NPT1012 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

Part # NPT1012
Description  Gallium Nitride 28V, 25W RF Power Transistor
PDF  8 Pages
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

NPT1012 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

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NPT1012
NDS-025 Rev. 3, April 2013
NPT1012
Page 1
FEATURES
• Optimized for broadband operation from
DC-4000MHz
• 25W P3dB CW power at 3000MHz
• 16-20W P3dB CW power from 1000-2500MHz in
application board with >45% drain efficiency
• 10-20W P3dB CW power from 30-1000MHz in ap-
plication board with >50% drain efficiency
• High efficiency from 14 - 28V
• 4.0 °C/W RTH with maximum TJ rating of 200 °C
• Robust up to 10:1 VSWR mismatch at all angles
with no device damage at 90 °C flange
• Subject to EAR99 export control
DC – 4000 MHz
25 Watt, 28 Volt
GaN HEMT
Gallium Nitride 28V, 25W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Specifications (CW, 3000MHz): VDS = 28V, IDQ = 225mA, TC = 25°C, Measured in Nitronex Test Fixture
Symbol
Parameter
Min
Typ
Max
Units
P3dB
Average Output Power at 3dB Gain Compression
43
44
-
dBm
P1dB
Average Output Power at 1dB Gain Compression
-
43
-
dBm
GSS
Small Signal Gain
12
13
-
dB
h
Drain Efficiency at 3dB Gain Compression
57
65
-
%
VSWR
10:1 VSWR at all phase angles
No damage to the device
Figure 1 - Typical CW Performance in
Load-Pull, VDS = 28V, IDQ = 225mA
Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability
Figure 2 - Typical CW Performance1 in
Load-Pull, VDS = 28V, IDQ = 225mA


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