NPN SILICON PLANAR SWITCHING TRANSISTORS

PN2222

PN2222A

CBE

TO-92

Complementary Silicon Transistors For Switching And Linear Applications

DC Amplifier & Driver For Industrial Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

2222

2222A

UNIT

Collector -Emitter Voltage

VCEO

30

40

V

Collector -Base Voltage

VCBO

60

75

V

Emitter -Base Voltage

VEBO

5.0

6.0

V

Collector Current Continuous

IC

mA

Power Dissipation @Ta=25 degC

PD

mW

Derate Above 25deg C

mW/deg C

@ Tc=25 degC

PD

W

Derate Above 25deg C

mW/deg C

Operating And Storage Junction

Tj, Tstg

deg C

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

deg C/W

Junction to Ambient

Rth(j-a)

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

2222

2222A

UNIT

Collector -Emitter Voltage

VCEO

IC=10mA,IB=0

>30

>40

V

Collector -Base Voltage

VCBO

IC=10uA.IE=0

>60

>75

V

Emitter-Base Voltage

VEBO

IE=10uA, IC=0

>5.0

>6.0

V

Collector-Cut off Current

ICBO

VCB=50V, IE=0

<10

-

nA

VCB=60V, IE=0

-

<10

nA

Ta=150 deg C

VCB=50V, IE=0

<10

-

uA

VCB=60V, IE=0

-

<10

uA

ICEX

VCE=60V, VBE=3V

-

<10

nA

ICEO

VCE=10V, IB=0

<10

<10

nA

Emitter-Cut off Current

IEBO

VEB=3V, IC=0

-

<10

nA

Base-Cut off Current

IBEX

VCE=60V, VBE=3V

-

<20

nA

Collector Emitter Saturation Voltage

VCE(Sat)* IC=150mA,IB=15mA

<0.4

<0.3

V

IC=500mA,IB=50mA

<1.6

<1.0

V

Base Emitter Saturation Voltage

VBE(Sat) * IC=150mA,IB=15mA

<1.3

0.6-1.2

V

IC=500mA,IB=50mA

<2.6

<2.0

V

600

625

5

1.5

12

-55 to +150

83.3

200

Continental Device India Limited

Data Sheet

Page 1 of 4

E B

C

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company