PNP SILICON PLANAR EPITAXIAL TRANSISTOR

MPSL51

TO-92

CBE

Amplifier Transistor.

ABSOLUTE MAXIMUM RATINGS.

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

100

V

Collector -Emitter Voltage

VCEO

100

V

Emitter -Base Voltage

VEBO

4.0

V

Collector Current Continuous

IC

600

mA

Power Dissipation @Ta=25 degC

PD

625

mW

Derate Above 25 deg C

5.0

mw/deg C

Power Dissipation @Tc=25 degC

PD

1.5

W

Derate Above 25 deg C

12

mw/deg C

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

83.3

deg C/W

Junction to Ambient

Rth(j-a)

200

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Emitter Voltage

VCEO*

IC=1mA,IB=0

100

-

-

V

Collector -Base Voltage

VCBO

IC=100uA.IE=0

100

-

-

V

Emitter -Base Voltage

VEBO

IE=10uA, IC=-0

4.0

-

-

V

Collector-Cut off Current

ICBO

VCB=50V, IE=0

-

-

1.0

uA

Emitter-Cut off Current

IEBO

VEB=3V, IC=0

-

-

100

nA

DC Current Gain

hFE*

IC=50mA,VCE=5V

40

-

250

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

MPSL51

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Saturation Voltage

VCE(Sat)

IC=10mA,IB=1mA

-

-

0.25

V

IC=50mA,IB=5mA*

-

-

0.3

V

Base Emitter Saturation Voltage

VBE(Sat)

IC=10mA,IB=1mA

-

-

1.2

V

IC=50mA,IB=5mA*

-

-

1.2

V

Dynamic Characteristics

Small Signal Current Gain

hfe

IC=1mA, VCE=10V

20

-

-

f=1kHz

Transition Frequency

ft*

VCE=10V,IC=10mA,

60

-

-

MHz

f=100MHz

output Capacitance

Cobo

VCB=10V, IE=0

-

-

8.0

pF

f=1MHz

*Pulse Test: Pulse Width=300us, Duty Cycle=2%

Continental Device India Limited

Data Sheet

Page 1 of 3

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Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company