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MPSH10 Datasheet(PDF) 1 Page - Continental Device India Limited |
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MPSH10 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page  NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL UNITS Collector Emitter Voltage VCEO V Collector Base Voltage VCBO V Emitter Base Voltage VEBO V Power Dissipation @ Ta=25ºC PD mW Derate Above 25ºC mW/ºC Power Dissipation @ Tc=25ºC PD W Derate Above 25ºC mW/ºC Operating And Storage Junction Temperature Range Tj, Tstg - 55 to +150 ºC THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) ºC/W Junction to case Rth (j-c) ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL MIN MAX UNITS Collector Emitter Voltage VCEO 25 V Collector Base Voltage VCBO 30 V Emitter Base Voltage VEBO 3.0 V Collector Cut Off Current ICBO 100 nA Emitter Cut Off Current IEBO 100 nA DC Current Gain hFE 60 Collector Emitter Saturation Voltage VCE(sat) 0.50 V Base Emitter On Voltage VBE(on) 0.95 V DYNAMIC CHARACTERISTICS DESCRIPTION SYMBOL MIN MAX UNITS Transition Frequency fT IC=4mA, VCE=10V, f=100MHz 650 MHz Collector Base Capacitance Ccb 0.70 pF Common Base feedback Capacitance Crb 0.35 0.65 pF Collector Base Time Constant rb' CC 9.00 ps IC=4mA,VCB=10V, f=31.8MHz TEST CONDITION IC=4mA, IB=0.4mA IC=4mA,VCE=10V VCB=10V, IE=0, f=1MHz VCB=10V, IE=0, f=1MHz 357 125 TEST CONDITION IC=1mA, IB=0 IC=100µA, IE=0 IE=10µA, IC=0 VCB=25V, IE = 0 VEB=2V, IC = 0 IC=4mA,VCE=10V VALUE 25 30 3.0 350 2.8 1.0 8.0 B E C Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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