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MPSA28 Datasheet(PDF) 1 Page - Continental Device India Limited |
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MPSA28 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page  NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS MPSA28 / MPSA29 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MPSA28 UNITS Collector Emitter Voltage VCES 80 V Collector Base Voltage VCBO 80 V Emitter Base Voltage VEBO V Collector Current Continuous IC mA Power Dissipation at Ta=25ºC PD mW Derate Above 25ºC mW/ºC Power Dissipation at Tc=25ºC PD W Derate Above 25ºC mW/ºC Operating And Storage Junction Temperature Range Tj, Tstg ºC THERMAL CHARACTERISTICS Junction to Ambient in free air Rth (j-a) ºC/W Junction to Case Rth (j-c) ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MAX UNITS Collector Emitter Voltage VCES IC=100µA, VBE=0 MPSA28 V MPSA29 V Collector Base Voltage VCBO IC=100µA, IE=0 MPSA28 V MPSA29 V Emitter Base Voltage VEBO IE=10µA, IC=0 V Collector Cut Off Current ICBO VCB=60V, IE=0, MPSA28 100 nA VCB=80V, IE=0, MPSA29 100 nA Collector Cut Off Current ICES VCE=60V, VBE=0, MPSA28 500 nA VCE=80V, VBE=0, MPSA29 500 nA Emitter Cut Off Current IEBO VEB=10V, IC = 0 100 nA DC Current Gain *hFE VCE=5V, IC=10mA VCE=5V, IC=100mA Collector Emitter Saturation Voltage *VCE (sat) IC=10mA, IB=0.01mA 1.2 V IC=100mA, IB=0.1mA 1.5 V Base Emitter On Voltage *VBE (on) VCE=5V, IC=100mA 2.0 V Current Gain Bandwidth Product **fT IC=10mA, VCE=5V, f=100MHz 125 MHz Output Capacitance Cob VCB=10V, IE=0V, f=1.0 MHz 8.0 pF *Pulse test: Pulse Width <300 µµs, Duty Cycle<2% **fT = IhfeI* ftest MPSA28_29Rev270607E 10,000 625 5.0 10,000 MIN 83.3 80 100 80 100 12 MPSA29 100 12 500 100 1.5 12 - 55 to +150 200 E B C Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Similar Part No. - MPSA28 |
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Similar Description - MPSA28 |
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