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MPS6531 Datasheet(PDF) 1 Page - Continental Device India Limited

Part # MPS6531
Description  NPN SILICON PLANAR EPITAXIAL TRANSISTORS
PDF  4 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

MPS6531 Datasheet(HTML) 1 Page - Continental Device India Limited

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NPN SILICON PLANAR EPITAXIAL TRANSISTORS
MPS6530
MPS6531
TO-92
Plastic Package
AMPLIFIER TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
UNITS
Collector Emitter Voltage
V
Collector Base Voltage
V
Emitter Base Voltage
V
Collector Current Continuous
mA
Power Dissipation @ Ta=25ºC
mW
Derate Above 25ºC
mW/ºC
Operating And Storage Junction
Temperature Range
ºC
THERMAL CHARACTERISTICS
Junction to Case
ºC/W
Junction to Ambient in free air
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MAX
UNITS
Collector Emitter Voltage
VCEO
IC=10mA, IB=0
V
Collector Base Voltage
VCBO
IC=10µA, IE=0
V
Emitter Base Voltage
VEBO
IE=10µA, IC=0
V
Collector Cut Off Current
ICBO
VCB=40V, IE=0,
50
nA
VCB=40V, IE=0, Ta=60ºC
2.0
µA
DC Current Gain
hFE
IC=10mA, VCE=1V
MPS6530
MPS6531
IC=100mA, VCE=1V
MPS6530
120
MPS6531
270
IC=500mA, VCE=10V
MPS6530
MPS6531
Collector Emitter Saturation Voltage
VCE (sat)
IC=100mA, IB=10mA
MPS6530
0.5
V
MPS6531
0.3
V
Base Emitter Saturation Voltage
VBE (sat)
IC=100mA, IB=10mA
1.0
V
DYNAMIC CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
MAX
UNITS
Output Capacitance
Cobo
VCB=10V, IE=0, f=1MHz
7
pF
90
MIN
5
30
60
40
60
5
Rth (j-c)
Rth (j-a)
83.3
200
50
SYMBOL
625
VALUE
40
60
5
VCBO
VEBO
IC
600
MIN
VCEO
40
25
PD
- 55 to +150
Tj, Tstg
E B
C
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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