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2N1613 Datasheet(PDF) 1 Page - Continental Device India Limited |
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2N1613 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page  NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS Collector Emitter Voltage (RBE<10 Ω) VCER 50 V Collector Base Voltage VCBO 75 V Emitter Base Voltage VEBO 7.0 V Collector Current Continuous IC 500 mA Power Dissipation @ Ta=25ºC PD 800 mW Derate Above 25ºC 4.57 mW/ºC Power Dissipation@ Tc=25ºC PD 3W Derate Above 25ºC 17.15 mW/ºC Operating And Storage Junction Tj, Tstg -65 to +200 ºC Temperature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) 218.7 ºC/W Junction to Case Rth(j-c) 58.3 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL MIN TYP MAX UNITS Collector Emitter Breakdown Voltage VCER(sus)* IC=100mA,RBE <10Ω 50 V Collector Base Breakdown Voltage BVCBO IC=100µA, IE=0 75 V Emitter Base Breakdown Voltage BVEBO IE =100µA, IC=0 7 V Collector Leakage Current ICBO VCB=60V, IE=0 10 nA VCB=60V, IE=0,TA=150ºC 10 µA Emitter Leakage Current IEBO VEB=5V,IC=0 10 nA Collector Emitter Saturation Voltage VCE(Sat) *IC=150mA,IB=15mA 0.3 1.5 V Base Emitter Saturation Voltage VBE(Sat) *IC=150mA,IB=15mA 0.78 1.3 V DC Current Gain hFE*IC=0.1mA,VCE=10V 20 35 IC=10mA,VCE=10V 35 50 IC=150mA,VCE=10V 40 80 120 IC=500mA,VCE=10V 20 30 IC=10mA,VCE=10V 20 Ta=-55ºC Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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