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2N930 Datasheet(PDF) 1 Page - Continental Device India Limited |
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2N930 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page  NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N930 UNIT Collector Emitter Voltage VCEO 45 V Collector Base Voltage VCBO 45 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC mA Power Dissipation @ Ta=25ºC PD mW Derate Above 25ºC mW/ ºC Power Dissipation @ Tc=25ºC PD mW Derate Above 25ºC mW/ ºC Operating And Storage Junction Temperature Range Tj, Tstg ºC THERMAL CHARACTERISTICS Junction to Ambient in free air Rth (j-a) ºC/W Junction to Case Rth (j-c) ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION 2N930 2N930A UNIT Collector Emitter Voltage *VCEO IC=10mA, IB=0 >45 >60 V Collector Base Voltage VCBO IC=10µA, IE=0 >45 >60 V Emitter Base Voltage VEBO IE=10µA, IC=0 >5 >6 V Collector Cut Off Current ICBO VCB=45V, IE=0 <10 <2 nA Collector Cut Off Current ICEO VCE=5V, IB=0 <2 <2 nA Emitter Cut Off Current IEBO VEB=5V, IC=0 <10 <2 nA Collector Cut Off Current ICES VCE=45V, VBE=0 <10 <2 nA VCE=45V, VBE=0, Ta=170ºC <10 <2 µ A Collector Emitter Saturation Voltage *VCE (sat) IC=10mA, IB=0.5mA <1.0 <0.5 V Base Emitter Saturation Voltage *VBE (sat) IC=10mA, IB=0.5mA 0.7 - 0.9 0.7 - 0.9 V DC Current Gain hFE IC=1µA, VCE=5V >60 IC=10µA, VCE=5V 100-300 100-300 IC=10µA, VCE=5V, Ta= -55ºC >20 >30 IC=500µA, VCE=5V >150 *IC=10mA, VCE=5V <600 <600 *Pulse Test: Pulse width <300 µµs, Duty cycle< 2% 60 6 30 300 1.72 600 2N930A 60 3.42 - 65 to +200 583 292 Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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