1N4151 datasheet(1/3 Pages) CDIL

Part #	1N4151

Description	SILICON PLANAR EPITAXIAL HIGH SPEED DIODE

PDF	3 Pages

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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SILICON PLANAR EPITAXIAL HIGH SPEED DIODE

1N4151

500mW

DO- 35

Glass Axial Package

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNIT

Reverses Voltage ( Continuous)

VR

50

V

Repetitive Peak Reversse Voltage

VRRM

75

V

Total Power Dissipation @ TA=25ºC

Ptot

500

mW

Linear Derating Factor

2.85

mW/ºC

Storage Temperature

Tstg

-65 to +200

ºC

Junction Temperature

Tj

200

ºC

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Forward Voltage

VF

IF=50mA,

1.0

V

Reverse Current

IR

VR= 50V

0.05

µΑ

VR =50V, Tj=150ºC

50

µΑ

Breakdown Voltage

BV

IR=5.0µA

75

V

Reverse Recovery Time

trr

IF=10mA to IR=10mA

4ns

Recovery to 1.0mA

IF=10mA, VR=-6.0V

2ns

RL=100 Ω

Capacitance

C

VR=0, f=1.0MHz

4pF

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

Continental Device India Limited

Data Sheet

Page 1 of 3

1N4150Rev011001

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