LP1500

Phone:

(408) 988-1845

http://

www.filss.com

Revised:

1/18/01

Fax:

(408) 970-9950

Email:

sales@filss.com

• FEATURES

♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz

♦ 8 dB Power Gain at 18 GHz

♦ 28 dBm Output Power at 1-dB Compression at 3.3V

♦ 45dBm Output IP3 at 18GHz

♦ 50% Power-Added Efficiency

• DESCRIPTION AND APPLICATIONS

The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)

Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-

write 0.25

µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure

minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have

and is available in a P100 flanged ceramic package and in the low cost plastic SOT89 package.

Typical applications include commercial and other narrowband and broadband high-performance

amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output

amplifiers, and medium-haul digital radio transmitters.

• ELECTRICAL SPECIFICATIONS @ T

°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Saturated Drain-Source Current

375

490

600

mA

Power at 1-dB Compression

P-1dB

30

31.5

dBm

Power Gain at 1-dB Compression

G-1dB

6

8

dB

Output Third Intercept Point

IP3

45

dBm

Power-Added Efficiency

PAE

50

%

Maximum Drain-Source Current

925

mA

Transconductance

385

450

mS

Gate-Source Leakage Current

10

75

µA

Pinch-Off Voltage

-0.25

-1.2

-2.0

V

Gate-Source Breakdown

Voltage Magnitude

-12

-15

V

Gate-Drain Breakdown

Voltage Magnitude

-12

-16

V

Thermal Resistivity

Θ

JC

45

°C/W

frequency=18 GHz

DRAIN

BOND

PAD (2X)

SOURCE

BOND

PAD (2x)

GATE

BOND

PAD (2X)

DIE SIZE: 16.5X16.1 mils (420x410

µm)

DIE THICKNESS: 3 mils (75

µm)

BONDING PADS: 1.9X2.4 mils (50x60

µm)