2SJ557 datasheet(2/8 Pages) NEC

2 / 8 page

Data Sheet D13292EJ1V0DS00

2SJ557

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Drain Cut-off Current

IDSS

VDS = –30 V, VGS = 0 V

–10

µA

Gate Leakage Current

IGSS

VGS = ±16 V, VDS = 0 V

±10

µA

Gate Cut-off Voltage

VGS(off)

VDS = –10 V, ID = –1 mA

–1.0

–1.7

–2.5

Forward Transfer Admittance

| yfs |VDS = –10 V, ID = –1.5 A1

2.5

Drain to Source On-state Resistance

RDS(on)1

VGS = –10 V, ID = –1.0 A

114

155

Ω

RDS(on)2

VGS = –4.5 V, ID = –1.0 A

178

255

Ω

RDS(on)3

VGS = –4.0 V, ID = –1.0 A

212

290

Ω

Input Capacitance

Ciss

VDS = –10 V

312

Output Capacitance

Coss

VGS = 0 V

117

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = –10 V12

Rise Time

ID = –1.0 A7

Turn-off Delay Time

td(off)

VGS(on) = –10 V

133

Fall Time

RG = 10

Ω

Total Gate Charge

VDD= –10 V2.8

Gate to Source Charge

QGS

ID = –2.5 A1.0

Gate to Drain Charge

QGD

VGS = –4.0 V1.2

Diode Forward Voltage

VF(S-D)

IF = 2.5 A, VGS = 0 V0.84

Reverse Recovery Time

trr

IF = 2.5 A, VGS = 0 V28

Reverse Recovery Charge

Qrr

di/dt = 50 A /

µs7.8

TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE

PG.

VGS

D.U.T.

VDD

τ = 1 s

Duty Cycle

≤ 1 %

VGS

Wave Form

VGS

10 %

90 %

VGS(on)

10 %

90 %

td(on)

td(off)

10 %

RG = 10

Ω

ton

toff

PG.

Ω

D.U.T.

VDD

IG = 2 mA

2SJ557 Datasheet(PDF) 2 Page - NEC

2SJ557 Datasheet(HTML) 2 Page - NEC

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL