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2N5494 Datasheet(PDF) 1 Page - InterFET Corporation

Part # 2N5494
Description  N-Channel Silicon Junction Field-Effect Transistor
PDF  1 Pages
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Manufacturer  INTERFET [InterFET Corporation]
Direct Link  http://www.interfet.com
Logo INTERFET - InterFET Corporation

2N5494 Datasheet(HTML) 1 Page - InterFET Corporation

  2N5494 Datasheet HTML 1Page - InterFET Corporation  
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8/2014
2N5432, 2N5433, 2N5494
N-Channel Silicon Junction Field-Effect Transistor
∙ Low r
DS(on)
∙ Excellent Switching
∙ Low Cutoff Current
Absolute maximum ratings at TA = 25
oC
Reverse Gate Source & Gate Drain Voltage
-25V
Continuous Forward Gate Current
100 mA
Continuous Device Power Dissipation
300 mW
Power Derating
2.3 mW/
oC
Storage Temperature Range
-65
oC to +150oC
2N5432
2N5433
2N5434
At 25
oC free air temperature
NJ450
NJ450
NJ903
Process
Static Electrical Characteristics
Min
Max
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown
Voltage
V(BR)GSS
-25
-25
-25
V
IG = -1 uA, VDS = 0 V
Gate Reverse Current
IGSS
-200
-200
-200
pA
VGS = -10 V, VDS = 0 V
Gate Source Cutoff Voltage
VGS(OFF)
-4
-10
-3
-9
-1
-4
V
VDS = 10 V, VGS = 0 V
Drain Saturation Current
(pulsed)
IDSS
150
100
30
mA
VDS = 10 V, VGS = 0 V
Dynamic Electrical Characteristics
Drain -Source On Resistance
rds(on)
5
7
10
Ω
VGS = 0 V, ID = 0 V
f = 1
kHz
Common-Source Input
Capacitance
Ciss
30
30
30
pF
VDS = 0 V, VGS = -10 V
f = 1
MHz
Common-Source Reverse
Transfer Capacitance
Crss
15
15
15
pF
VDS = 0 V, VGS = -10 V
f = 1
MHz
Turn-On Delay Time
td
4
4
4
nS
VDD = -1.5 V,
VGS(on) = 0 V,
VGS(off) = -12 V,
ID(on) = 10 mA
Rise Time
tr
1
1
1
nS
Turn-Off Time
toff
6
6
6
nS
Fall Time
tf
30
30
30
nS
www.interfet.com
715 N. Glenville Dr., Ste. 400
Richardson, TX 75089
(972) 238-9700 Fax (972) 238-5338
Surface Mount
SMP5432, SMP5433,
SMP5434


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