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FMMT589 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # FMMT589
Description  30V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT589 Datasheet(HTML) 4 Page - Diodes Incorporated

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FMMT589
Document number: DS33103 Rev. 7 - 2
4 of 7
www.diodes.com
November 2013
© Diodes Incorporated
FMMT589
A Product Line of
Diodes Incorporated
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
-50
V
IC = -100μA
Collector-Emitter Breakdown Voltage (Note 8)
BVCEO
-30
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-7
V
IE = -100μA
Collector Cutoff Current
ICBO
-100
nA
VCB = -30V
Collector-Emitter Cutoff Current
ICES
-100
nA
VCES = -30V
Emitter Cutoff Current
IEBO
-100
nA
VEB = -5.6V
ON CHARACTERISTICS (Note 8)
DC Current Gain
hFE
100
100
80
40


300
IC = -1mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -2A, VCE = -2V
Collector-Emitter Saturation Voltage
VCE(sat)




-0.25
-0.35
-0.65
V
IC = -0.5A, IB = -50mA
IC = -1A, IB = -100mA
IC = -2A, IB = -200mA
Base-Emitter Saturation Voltage
VBE(sat)
-1.2
V
IC = -1A, IB = -100mA
Base-Emitter Turn-On Voltage
VBE(on)


-1.1
V
IC = -1A, VCE = -2V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
15
pF
VCB = -10V, f = 1MHz
Current Gain-Bandwidth Product
fT
100
MHz
VCE = -5V, IC = -100mA,
f = 100MHz
Notes:
8. Measured under pulsed conditions. Pulse width
 300µs. Duty cycle 2%



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