NPN/PNP COMPLEMENTARY SILICON PLANAR EPITAXIAL

CVG639 (NPN)

TRANSISTORS

CVG640 (PNP)

TO-237

EBC

Driver Stages of Audio Amplifier Application

ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )

DESCRIPTION

SYMBOL

VALUE

UNITS

Collector -Base Voltage

VCBO

150

V

Collector -Emitter Voltage

VCEO

135

V

Emitter -Base Voltage

VEBO

5.0

V

Collector Current Continuous

IC

1.0

A

Peak

ICM

1.5

A

Base Current Continuous

IB

100

mA

Peak

IBM

200

mA

Power Dissipation@ Ta=25 deg C

PD

750

mW

Derate Above 25 deg C

6.0

mW/deg C

Power Dissipation@ Tc=25 deg C

PD

2.5

W

Derate Above 25 deg C

20

mW/deg C

Operating & Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

UNITS

Min

Max

Collector -Emitter Voltage

VCEO

IC=10mA, IB=0

135

-

V

Collector -Base Voltage

VCBO

IC=100uA.IE=0

150

-

V

Emitter-Base Voltage

VEBO

IE=10uA, IC=0

5.0

-

V

Collector-Cut off Current

ICBO

VCB=30V, IE=0

-

100

nA

VCB=30V, IE=0, Ta=125 deg C

-

10

uA

Base Emitter on Voltage

VBE(on) *

IC=500mA, VCE=2V

-

1.0

V

Collector Emitter Saturation Voltage

VCE(Sat) * IC=500mA, IB=50mA

-

0.5

V

DC Current Gain

hFE

IC=5mA, VCE=2V

25

-

IC=150mA,VCE=2V *

80

-

IC=500mA,VCE=2V *

15

-

VALUE

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company