PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS

CIL1020 (PNP)

CIL2655 (NPN)

TO-237

BCE

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

50

V

Collector -Emitter Voltage

VCEO

60

V

Emitter Base Voltage

VEBO

6

V

Collector Current

IC

3

A

Power Dissipation Ta=25 deg C

PC

900

mW

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Emitter Voltage

VCEO

IC=10mA, IB=0

50

-

-

V

Collector Cut off Current

ICBO

VCB=50V, IE=0

-

-

1.0

uA

Emitrer Cut off Current

IEBO

VEB=5V, IC=0

-

-

1.0

uA

DC Current Gain

hFE

IC=500mA,VCE=2V *

70

-

240

IC=1.5A,VCE=2V

40

-

-

Collector Emitter Saturation Voltage

VCE(Sat)

IC=1A, IB=50mA

-

-

0.50

V

Base Emitter Saturation Voltage

VBE(Sat)

IC=1A, IB=50mA

-

-

1.2

V

Dynamic Characteristics

Gain Bandwidth Product

ft

VCE=2V,IC=50mA

-

100

-

MHz

Output Capacitance

Cob NPN VCB=10V, IE=0

-

30

-

pF

PNP f=1MHz

-

40

-

pF

Switching Time

Turn on Time

ton

VCC=30V, IB1=1B2

-

0.1

us

Storage Time

tstg

=50mA, RL=30 ohms

1.0

us

Fall Time

tf

Duty Cycle=1%

0.1

us

CLASSIFICATION

O

Y

hFE *

70-140

120-240

Continental Device India Limited

Data Sheet

Page 1 of 2

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company