D100 datasheet(1/4 Pages) CDIL

Part #	D100

Description	SILICON PLANAR EPITAXIAL TRANSISTORS

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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SILICON PLANAR EPITAXIAL TRANSISTORS

C100

PNP

D100

NPN

TO-92

Plastic Package

These are complementary transistors for medium power voltage and current amplifier

applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise)

DESCRIPTION

SYMBOL

UNITS

Collector Base Voltage

VCBO

V

Collector Emitter Voltage

VCER

V

Emitter Base Voltage

VEBO

V

Collector Current Continuous

IC

A

Power Dissipation @ Ta=25ºC

Power Dissipation @ Tc=25ºC

THERMAL CHARACTERISTICS

Thermal Resistance Junction-to-

Ambient

Rth(j-a)

oC/W

Thermal Resistance Junction-to-Case

Rth(j-c)

oC/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNITS

Collector Base Voltage

VCBO

IC=100µA,IE=0

60

V

Collector Emitter Voltage

VCER

*

IC=10mA,RBE=1KΩ

50

V

Emitter Base Voltage

VEBO

IE=100µA, IC=0

5

V

Collector Cut off Current

ICBO

VCB=40V, IE = 0

50

nA

Emitter Cut off Current

IEBO

VBE=4V, IC = 0

25

nA

DC Current Gain

hFE

*

VCE=1V, IC=150mA

50

280

Collector-Emitter Saturation Voltage

VCE(sat)*

IC=150mA, IB=15mA

0.6

V

Base-Emitter ON Voltage

VBE(on)*

IC=150mA, VCE=1V

0.9

V

*Pulse Condition: Pulse Width < 300us, Duty Cycle < 2%.

C100_D100 Rev_1 301104D

PD

156.3

250

1

500

800

VALUE

60

50

5

mW

Operating And Storage Junction

Temperature Range

Tj, Tstg

-55 to +150

ºC

C B

E

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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