BT151F-6

00

TO-220F

Thyristor Series

Absolute maximum ratings

Parameter

Symbol

Value

Unit

Test condition

peak repetitive off-stage voltage

>600

V

on-state RMS current

12

A

Tc=105

average on-state current

8

A

Tc=105

NON repetitive surge peak on-state current

140

A

Tp=10ms, Tj=25

critical rate of rise on-state current

dI/dt

50

A/

µs

F=60HZ

peak gate current

4

A

tp=20

µs

average gate power dissipation

1

W

storage temperature range

Tstg

- 40 to +150

operating junction temperature range

Tj

125

Electrical characteristics ( Tj=25ºC) unless otherwise specified

Parameter

Symbol

Value

Unit

Test condition

gate trigger current

2-15

mA

gate trigger voltage

<1.3

V

hold current

<30

mA

critical rate of rise off-state voltage

dv/dt

>50

V/

µ s

on-state voltage

<1.6

V

off-state leakage current

<5.0

mA

Rth(j-a)

60

Rth(j-c)

<1.3

BT151F- 600 Rev170510E

Disclaimer

thermal resistance

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your

product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality

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Data Sheet

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