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BSR20 Datasheet(PDF) 2 Page - Continental Device India Limited

Part # BSR20
Description  SILICON P?밡?밣 HIGH?밮OLTAGE TRANSISTORS
PDF  5 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BSR20 Datasheet(HTML) 2 Page - Continental Device India Limited

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Continental Device India Limited
Data Sheet
Page 2 of 5
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
BSR20
BSR20A
Collector–base voltage (open emitter)
–VCBO
max. 130
160 V
Collector–emitter voltage (open base)
–VCEO
max. 120
150 V
Emitter–base voltage (open collector)
–VEBO
max.
5
V
Collector current
–I C
max.
600
mA
Total power dissipation
up to Tamb = 25 °C
Ptot
max.
250
mW
Junction temperature
Tj
max.
150
° C
Storage temperature
Tstg
–55 to +150
° C
THERMAL RESISTANCE
From junction to ambient
Rth j–a
=
500
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
BSR20
BSR20A
Collector cut–off current
IE = 0; –VCB = 100 V
–ICB0
max. 100
nA
IE = 0; –VCB = 120 V
–ICB0
max.
50 nA
IE = 0; –VCB = 100 V; Tamb = 100 °C
–ICB0
max. 100
µA
IE = 0; –VCB = 120 V; Tamb = 100 °C–ICB0
max.
50
µA
Emitter cut–off current
IC = 0; –VEB = 4,0 V
–IEB0
max.
50
50 nA
Brealkdown voltages
IC = 1,0 mA; lB = 0
–V(BR)CE0 min. 120
150 V
IC = 100 µA; IE = 0
–V(BR)CB0 min. 130
160 V
IC = 0; IE = 10µA–V(BR)EB0 min. 5,0
5,0 V
Saturation voltages
–IC = 10 mA; –IB = 1,0 mA
–VCEsat
max. 0,2
0,2 V
–VBEsat
max. 1,0
1,0 V
–IC = 50 mA; —lB = 5,0 mA
–VCEsat
max. 0,5
0,5 V
–VBEsat
max. 1,0
1,0 V
D.C. current gain
IC = 1,0 mA; –VCE = 5 V
hFE
min.
30
50
IC = 10 mA; –VCE = 5 V
hFE
min.
40
60
max. 180
240
IC = 50 mA; –VCE = 5 V
hFE
min.
40
50
Output capacitance at f = 1 MHz
IE = 0; –VCB = 10V
Co
max.
6
6 pF
BSR20
BSR20A



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