PNP SILICON PLANAR EPITAXIAL TRANSISTORS

BSV15

BSV16

BSV17

TO- 39

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

BSV15 BSV16

BSV17

UNIT

Collector -Emitter Voltage

VCEO

40

60

80

V

Collector -Emitter Voltage

VCES

40

60

90

V

Emitter -Base Voltage

VEBO

5.0

5.0

5.0

V

Collector Current (DC)

IC

1.0

A

Base Current (DC)

IB

200

mA

Power Dissipation up to Tamb=25 degC

Ptot

0.8

W

Power Dissipation up to Tcase=25 degC

5.0

W

Power Dissipation up to Tmb=50 degC

5.0

W

Operating And Storage Junction

Tj, Tstg

-65 to +200

deg C

Temperature Range

THERMAL RESISTANCE

Junction to Ambient

Rth(j-a)

220

K/W

Junction to Case

Rth(j-c)

35

K/W

Junction to Mounting Base

Rth(j-mb)

30

K/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

BSV15

BSV16

BSV17 UNIT

Collector-Cut off Current

ICES

VBE=0, VCE=40V

<100

-

-

nA

VBE=0, VCE=60V

-

<100

-

nA

VBE=0, VCE=80V

-

-

<100

nA

Tamb=150 deg C

VBE=0, VCE=40V

<50

-

-

uA

VBE=0, VCE=60V

-

<50

-

uA

VBE=0, VCE=80V

-

-

<50

uA

ICEX

Tamb=100 deg C

VBE=0.2V, VCE=40V

<50

-

-

uA

VBE=0.2V, VCE=60V

-

<50

-

uA

VBE=0.2V, VCE=80V

-

-

<50

uA

Emitter-Cut off Current

IEBO

IC=0, VEB=4V

<50

<50

<50

nA

Collector -Emitter Voltage

VCEO*

IC=50mA, IB=0

>40

>60

>80

V

VCES

VBE=0, IC=10uA

>40

>60

>90

V

Emitter-Base Voltage

VEBO

IE=10uA, IC=0

>5.0

>5.0

>5.0

V

Base Emitter on Voltage

VBE(on) IC=100mA, VCE=1V

ALL

<1.0

V

IC=500mA, VCE=1V

ALL

0.7 to 1.4

V

Collector Emitter Saturation Voltage

VCE(Sat) IC=500mA,IB=25mA

ALL

<1.0

V

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company