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BFY52 Datasheet(PDF) 2 Page - Continental Device India Limited |
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BFY52 Datasheet(HTML) 2 Page - Continental Device India Limited |
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2 / 4 page ![]() SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package DESCRIPTION SYMBOL BFY50 BFY51 BFY52 UNITS Emitter Cut off Current IEBO VEB=5V, IC=0 <50 <50 <50 µA Tj =100 oC VEB=5V, IC=0 <2.8 <2.8 <2.8 µA DC Current Gain hFE IC=10mA,VCE=6V >20 >30 >30 IC=150mA,VCE=6V >30 >40 >60 IC=1A,VCE=6V >15 >15 >15 Collector Emitter Saturation Voltage VCE(Sat) *IC=150mA,IB=15mA <0.2 <0.35 <0.35 V IC=1A,IB=100mA <0.1 <1.6 <1.6 V Base Emitter Saturation Voltage VBE(Sat) *IC=1A,IB=100mA <2.0 <2.0 <2.0 V DYNAMIC CHARACTERISTICS Small Signal Current Gain | hfe |IC=1mA, VCE=6V, >10 >30 >30 f=1kHz Output Capacitance Cob VCB=12V, f=500kHz <12 <12 <12 pF Transistors Frequency fT IC=50mA, VCE=6V >60 >50 >50 MHz f=20MHz *Pulse Test: Pulse Width= 300 µs, Duty Cycle =1% Continental Device India Limited Data Sheet Page 2 of 4 |
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