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BF959 Datasheet(PDF) 2 Page - Continental Device India Limited |
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BF959 Datasheet(HTML) 2 Page - Continental Device India Limited |
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2 / 4 page ![]() NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Breakdown Voltage BVCEO IC=1mA,IB=0 20 V Collector Base Breakdown Voltage BVCBO IC=10µA,IE=0 30 V Emitter Base Breakdown Voltage BVEBO IE=10µA, IC=0 3V Collector Cut off Current ICBO VCB=20V, IE = 0 100 nA DC Current Gain hFE VCE=10V,IC=5mA 35 VCE=10V,IC=20mA 40 Base Emitter Saturation Voltage VBE(sat) IC=30mA,IB=2mA 1.0 V Collector Emitter Saturation VCE(sat) IC=30mA,IB=2mA 1.0 V Voltage DYNAMIC CHARACTERSTICS Transition Frequency fT IC=20mA, VCE=10V, 700 MHz f=100MHz IC=30mA, VCE=10V, 600 MHz f=100MHz Common Emitter Feedback Cre VCB=10V, f=10MHz 0.65 pF Capacitance Noise Figure NF IC=4mA, VCE =10V 3.0 dB Rs=50 Ω, f=200MHz VALUE Continental Device India Limited Data Sheet Page 2 of 4 |
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