PNP SILICON EPITAXIAL POWER TRANSISTOR

BD 240C

(BPL)

TO-220

Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier

Applications,Series And Shunt Regulators, Driver And Output Stages of HI-FI Amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

115

V

Collector -Emitter Voltage

VCEO

100

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current Continuous

IC

2.0

A

Peak

ICM

4.0

A

Base Current

IB

0.6

A

Collector Power Dissipation @ Ta=25 deg C

PD

2.0

W

Derate Above 25 deg C

16

mW/deg C

Collector Power Dissipation @ Tc=25 deg C

PD

30

W

Derate Above 25 deg C

240

mW/deg C

Unclamped Inductive Load Energy (1)

E32

mj

Junction Temperature

Tj

150

deg C

Storage Temperature Range

Tstg

-65 to +150

deg C

Thermal Resistance

Junction to Ambient

Rth(j-a)

62.5

deg C/W

Junction to Case

Rth(j-c)

4.17

deg C/W

(1)Lc=20mH, RBE=100 ohms, RE=0.1 ohms , IC=1.8A.

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter (sus) Voltage

VCEO(sus)* IC=30mA, IB=0

100

-

-

V

Collector Cut off Current

ICEO

VCE=60V, IB=0

-

-

0.3

mA

ICES

VCE=100V, VBE=0

-

-

0.2

mA

Emitter Cut off Current

IEBO

VBE=5V,IC=0

-

-

1.0

mA

DC Current Gain

hFE*

IC=0.2A, VCE=4V

40

-

-

IC=1A, VCE=4V

15

-

-

Collector Emitter Saturation Voltage

VCE(Sat)*

IC=1A, IB=0.2A

-

-

0.7

V

Base Emitter on Voltage

VBE(on)*

IC=1A, VCE=4V

-

-

1.3

V

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

BD240C

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Dynamic Characteristics

Small Signal Current Gain

hfe

VCE=10V, IC=0.2A

20

-

f=1kHz

Transition Frequency

ft

VCE=10V,IC=0.2A,

3.0

-

MHz

f=1MHz

*Pulse Condition: Pulse Width =300us, Duty Cycle=2%

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

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