NPN PLASTIC MEDIUM POWER SILICON TRANSISTORS

BD157, BD158

TO-126

Designed For Power Output Stages for Television, Radio, Phonograph And

Other Consumer Applications.

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

BD157

BD158

UNIT

Collector -Emitter Voltage

VCEO

250

300

V

Collector -Base Voltage

VCBO

275

325

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current Continuous

IC

0.5

A

Peak

IC

1.0

A

Base Current

IB

0.25

A

Power Dissipation @ Ta=25 deg C

PD

2.0

W

@ Tc=25 deg C

20

W

Derate Above =25 deg C

0.16

mW/deg C

Operating & Storage Junction

Tj, Tstg

-65 to +150

deg C

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth (j-c)

6.25

deg C/W

ELECTRICAL CHARACTERISTICS (Tc=25 deg C unless specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector-Emitter Sustaining Voltage VCEO

IC=1mA, IB=0

BD157 250

-

V

BD158 300

-

V

Collector-Base Voltage

VCBO

IC=100uA, IE=0

BD157 275

-

V

BD158 325

-

V

Emitter Base Voltage

VEBO

IE=1mA, IC=0

5.0

-

V

Collector Cut-off Current

ICBO

VCB=275V, IE=0

BD157

-

100

uA

VCB=325V, IE=0

BD158

-

100

uA

Emitter Cut-off Current

IEBO

VBE=5V,IC=0

-

100

uA

DC Current Gain

hFE

IC=50mA,VCE=10V

30

240

Collector Emitter Saturation Voltage

VCESAT

IC=50mA, IB=5mA

-

1.0

V

Base Emitter Saturation Voltage

VBESAT

IC=50mA, IB=5mA

-

1.0

V

Current-Gain-Bandwidth Product

ft

IC=10mA, VCE=10V

15

-

MHz

f=5 MHz

Output Capacitance

Cob

VCB=20V, f=1MHz

Typ10

pF

Continental Device India Limited

Data Sheet

Page 1 of 2

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company