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BD131 Datasheet(PDF) 1 Page - Continental Device India Limited |
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BD131 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  SILICON EPITAXIAL POWER TRANSISTORS BD131 NPN BD132 PNP TO-126 Plastic Package General Purpose Medium Power Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD131 UNIT Collector -Base Voltage VCBO 70 V Collector -Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6 V Collector Current Continuous IC A Peak ICM A Base Current Peak IBM A Reverse Base Current Peak -IBM A Total Device Dissipation upto Tamb=60ºC Ptot W Junction Temperature Tj oC Storage Temperature Range Tstg ºC Thermal Resistance From Junction to Mounting Base Rth(j-mb) K/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL MIN MAX UNIT 50 nA 50 nA 10 µA 10 µA 50 nA 50 nA 0.3 V 0.7 V 1.2 V 1.5 V 40 20 Dynamic Characteristics Collector Capacitance CC 60 pF DC Current Gain Ratio of the Complementary Pairs BD131_132Rev_1 120403D 6 0.5 0.5 3 15 150 VEB=5V, IC=0 BD131 VCB=40V, IE=0 BD132 -65 to +150 TEST CONDITION BD132 45 45 4 6 VCB=50V, IE=0 BD131 Emitter Cut-off Current IEBO VEB=3V, IC=0 BD132 Collector Cut-off Current ICBO VCB=50V, IE=0, Tj = 150 oC BD131 VCB=40V, IE=0, Tj = 150 oC BD132 Collector-Emitter Saturation Voltage VCE(sat) IC = 0.5A, IB = 50mA IC = 2A, IB = 200mA Base-Emitter Saturation Voltage VBE(sat) IC = 0.5A, IB = 50mA IC = 2A, IB = 200mA DC Current Gain hFE VCE = 12V, IC = 0.5A VCE = 1V, IC = 2A IE = 0, VCB = 5V, f = 1MHz BD131 Transition Frequency fT IC = 0.25A, VCE = 5V, f = 35MHz, 60 MHz Tamb = 25 oC hFE1/hFE2 VCE = 12V, IC = 0.5A 1.2 B C E Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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