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BD115 Datasheet(PDF) 1 Page - Continental Device India Limited |
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BD115 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BD115 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL UNITS Collector Emitter Voltage VCEO V Collector Emitter Voltage (RBE<1KΩ Ω VCER V Collector Base Voltage VCBO V Emitter Base Voltage VEBO V Collector Current Continuous IC mA Peak ICM mA Power Dissipation @ Ta=50ºC PD W Storage Temperature Tj, Tstg ºC THERMAL RESISTANCE Junction to Ambient Rth(j-a) ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Emitter Breakdown Voltage BVCEO IC=1mA,IB=0 180 V Collector Base Breakdown Current BVCBO IC=100µA, IE=0 245 V Emitter Base Breakdown Voltage BVEBO IE=100µA, Ic=0 5 V Collector Cutoff Current ICBO VCB=200V, IE=0 15 nA VCB=200V,IE=0,Tj=200ºC 550 µA Emitter Cutoff Current IEBO VEB=5V, IC=0 100 µA Collector Emitter Saturation Voltage VCE(Sat) * IC=100mA,IB=10mA 3.5 V Base Emitter On Voltage VBE(on) * IC=50mA,VCE=100V 1.0 V DC Current Gain hFE IC=50mA,VCE=100V 22 60 DYNAMIC CHARACTERISTICS Transition Frequency fT IC=30mA, VCE=100V 145 MHz f=20MHz Collector Base Time Constant rb'Cc IE=10mA, VCB=10V, 30 100 ps f=10MHz Feedback Capacitance Cre VCE=20V, IC=10mA, 3.5 pF f=1.0MHz *Pulse Test: Pulse Width <300 µµs, Duty Cycle <2% 25 VALUE 180 245 245 5 150 200 6 -55 to +200 VALUE Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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