BCX71G datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

Collector current (d.c.)

–I C

max.

200 mA

Base current

–lB

max.

50 mA

Total power dissipation up to Tamb = 25 °C

Ptot

max.

250 mW

Storage temperature

Tstg

–55 to +150 °C

Junction temperature

max.

150 ° C

THERMAL RESISTANCE

From junction to ambient

Rth j–a

500 K/W

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified

Collector–emitter cut–off current

VEB = 0; –VCE = 45 V

–ICES

<20 nA

VEB = 0; –VCE = 45 V; Tamb = 150 °C

–ICES

<20 mA

Emitter–base cut–off current

IC = 0; –VEB = 4 V

–IEB0

<20 nA

Saturation voltages

–VCEsat 0,06 to 0,25 V

–IC = 10 mA; –IB = 0,25 mA

–VBEsat 0,6 to 0,85 V

–VCEsat 0,12 to 0,55 V

–IC = 50 mA; –lB = 1,25 mA

–VBEsat 0,68 to 1,05 V

Transition frequency at f = 100 MHz ·

–VCE = 5 V; –IC = 10 mA

typ.

180 MHz

Capacitance

at f = 1 MHz

–VCB = 10 V; IE = Ie = 0

typ.

4,5 pF

Emitter capacitance at f = 1 MHz

–VEB = 0,5 V; IC = Ic = 0

typ.

11 pF

Noise figure at RS = 2 kW

–VCE = 5 V; –IC = 200 mA; B = 200 Hz

typ.

2 dB

<6 dB

BCX71G 71H

71J

71K

D.C. current gain

–VCE = 5 V; –IC = 10mAhFE

–

100

–VCE = 5 V; –IC = 2 mA

hFE

120

180

250

380

220

310

460

630

–VCE = 1 V; –IC = 50 mA

hFE

100

110

Small-signal current gain

–VCE = 5 V; –IC = 2 mA; f = 1 kHz hfe

125

175

250

350

250

350

500

700

Output admittance

–VCE = 5 V; –IC = 2 mA; f = 1 kHz hoe

typ.

50 mS

Base-emitter voltage

–VCE = 5 V; –IC = 2 mA

VBE

0,6 to 0.75

typ.

0,65

–VCE = 5 V; –IC = 10 mAVBE

typ.

0,55

–VCE = 1 V; –IC = 50 mA

VBE

typ.

0,72

BCX71G BCX71H

BCX71J BCX71K

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