PNP SILICON PLANAR TRANSISTOR

BCX23

TO-18

ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Emitter Voltage

VCES

125

V

Collector -Emitter Voltage

VCEO

125

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current

IC

800

mA

Peak

ICM

1.0

A

Base Current

IB

100

mA

Power Dissipation @ Ta=25 deg C

Ptot

450

mW

@ Tc=45 deg C

Ptot

1.55

W

Operating And Storage Junction

Tj, Tstg

-65 to +200

deg C

Temperature Range

Thermal Resistance

Junction to Case

Rth (j-c)

100

K/W

Junction to Ambient

Rth (j-a)

390

K/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Emitter Voltage

VCEO

IC=10mA, IB=0

125

-

-

V

VCES

IC=100uA, VBE=0

125

-

V

Emitter Base Voltage

VEBO

IE=100uA, IC=0

5.0

-

-

V

Collector Emitter Saturation Voltage

VCE(Sat) IC=300mA, IB=30mA

-

-

0.90

V

Base Emitter Saturation Voltage

VBE(Sat)

IC=300mA, IB=30mA

-

-

1.4

V

Collector Cut off Current

ICES

VCE=100V, VBE=0

-

-

100

nA

Ta=150 deg C

VCE=100V, VBE=0

-

-

10

uA

Emitter Cut off Current

IEBO

VEB=4V, IC=0

-

-

100

nA

DC Current Gain

hFE

IC=100mA,VCE=1V

63

-

-

DYNAMIC CHARACTERISTICS

IC=200mA,VCE=1V

40

-

-

Transition Frequency

ft

IC=10mA, VCE=5V, f=20MHz

Typ

-

100

MHz

Out-Put Capacitance

Cob

VCB=10V, IE=0, f=1MHz

Typ

-

12

pF

Continental Device India Limited

Data Sheet

Page 1 of 2

Continental Device India Limited

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