BCW69 datasheet(1/4 Pages) CDIL

Part #	BCW69

Description	SILICON PLANAR EPITAXIAL TRANSISTORS

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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Continental Device India Limited

Data Sheet

Page 1 of 4

BCW69

BCW70

SILICON PLANAR EPITAXIAL TRANSISTORS

P–N–P transistors

Marking

BCW69 = H1

BCW70 = H2

ABSOLUTE MAXIMUM RATINGS

BCW69

BCW70

D.C. current gain at Tj = 25 °C

>

120

215

–IC = 2 mA; –VCE = 5 V

hFE

<

260

500

Collector–base voltage (open emitter)

–VCB0 max.

50

V

Collector–emitter voltage (open base)

–VCE0 max.

45

V

Collector current (peak value)

–ICM max.

200

mA

Total power dissipation up to Tamb = 25 °C

Ptot

max.

250

mW

Junction temperature

Tj

max.

150

° C

Transition frequency at f = 35 MHz

–IC = 10 mA; –VCE = 5 V

fT

typ.

150

MHz

Noise figure at RS = 2 kΩ

–IC = 200 µA; –VCE = 5 V;

f = 1 kHz; B = 200 Hz

F

<

10

dB

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

3

2

1

SOT-23 Formed SMD Package

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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