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BCW65A Datasheet(PDF) 1 Page - Continental Device India Limited |
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BCW65A Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  Continental Device India Limited Data Sheet Page 1 of 3 GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC ABSOLUTE MAXIMUM RATINGS BCW65A 65B 65C Collector–base voltage (open emitter) –VCBO max. 60 60 60 V Collector–emitter voltage (open base) –VCEO max. 32 32 32 V Emitter–base voltage (open collector) –VEBO max. 5 5 5 V Collector current (d.c.) –I C max. 800 800 800 mA Total power dissipation at Tamb = 25°C Ptot max 225 225 225 mW D.C. current gain –IC = 100 mA; –VCE = 10 V hFE min. 35 50 80 min. 75 110 180 IC = 10 mA; VCE = 1 V max. 220 min. 100 160 250 IC = 100 mA; VCE = 1 V max. 250 400 630 IC = 500 mA; VCE = 2 V min. 35 60 100 BCW65A, BCW65B BCW65C PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Similar Part No. - BCW65A |
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Similar Description - BCW65A |
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