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BCW60C Datasheet(PDF) 1 Page - Continental Device India Limited |
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BCW60C Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page ![]() Continental Device India Limited Data Sheet Page 1 of 3 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) VCES max. 32 V Collector–emitter voltage (open base) VCE0 max. 32 V Collector current (d.c.) IC max. 200 mA Total power dissipation Ptot max. 250 mW Junction temperature Tj max. 150 ° C Transition frequency at f = 100 MHz VCE = 5 V; IC = 10 mA fT typ. 250 MHz Noise figure at f = 1 kHz VCE = 5V; IC = 200 mA; B = 200Hz F typ. 2 dB BCW60A BCW60B BCW60C BCW60D Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Similar Part No. - BCW60C |
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Similar Description - BCW60C |
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