BCP54 datasheet(1/4 Pages) CDIL

Part #	BCP54

Description	NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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NPN SILICON PLANAR EPITAXIAL TRANSISTORS

BCP54 BCP55 BCP56

SOT-223

Formed SMD Package

General Purpose Medium Power DC Applications

Complementary BCP51 BCP52 and BCP53

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

BCP54

BCP55

Collector Base Voltage

VCBO

45

60

100

Collector Emitter Voltage

VCEO

45

60

80

Emitter Base Voltage

VEBO

Collector Current (DC)

IC

Collector Current Peak

ICM

Base Current Peak

IBM

Power Dissipation upto Tamb=25ºC

*PD

Storage Temperature

Tstg

Junction Temperature

Tj

Operating Ambient Temperature

Tamb

THERMAL RESISTANCE

From junction to ambient

*Rth (j-a)

From junction to soldering point

Rth (j-a)

* Device Mounted on printed circuit board, single sided copper, tinplated, mounting pad for collector 1 cm

2.

ABSOLUTE MAXIMUM RATINGS (Tamb=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNITS

Collector Cut Off Current

ICBO

VCB=30V, IE=0

100

nA

VCB=30V, IE=0, Tj=125ºC

10

µA

Emitter Cut Off Current

IEBO

VEB=5V, IC=0

100

nA

DC Current Gain

hFE

IC=5mA, VCE=2V

63

IC=150mA, VCE=2V

63

250

IC=500mA, VCE=2V

40

DC Current Gain

hFE

IC=150mA, VCE=2V

Group -10

63

160

Group -16

100

250

Collector Emitter Saturation Voltage

VCE (sat)

IC=0.5A, IB=50mA

0.5

V

Base Emitter On Voltage

VBE (on)

IC=0.5A, VCE=2V

1.0

V

Transition Frequency

fT

IC=10mA, VCE=5V,f=100MHz

130

MHz

DC Current Gain Ratio of the

Complementary Pairs

hFE1/hFE2

IC=150mA, VCE=2V

1.6

BCP54_56Rev011104E

- 65 to +150

ºC

94

13

K/W

W

ºC

150

0.2

1.33

- 65 to +150

UNITS

V

A

BCP56

5.0

1.0

1.5

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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