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BC856AW Datasheet(PDF) 1 Page - Continental Device India Limited

Part # BC856AW
Description  PNP SILICON PLANAR EPITAXIAL TRANSISTORS
PDF  4 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BC856AW Datasheet(HTML) 1 Page - Continental Device India Limited

  BC856AW Datasheet HTML 1Page - Continental Device India Limited BC856AW Datasheet HTML 2Page - Continental Device India Limited BC856AW Datasheet HTML 3Page - Continental Device India Limited BC856AW Datasheet HTML 4Page - Continental Device India Limited  
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PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC856W , 857W, 858W
SOT-323
Formed SMD Package
Marking
BC856W =3D
BC857AW =3E
BC856AW =3A
BC857BW =3F
BC856BW =3B
BC857CW =3G
BC857W =3H
BC858W =3M
General Purpose Switching and Amplification.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
BC856W
BC857W
UNITS
Collector Base Voltage
VCBO
80
50
V
Collector Emitter Voltage
VCEO
65
45
V
Emitter Base Voltage
VEBO
5
5
5
V
Collector Current (DC)
IC
mA
Peak Collector Current
ICM
mA
Peak Base Current
IBM
mA
Power Dissipation upto Tamb=25ºC
*Ptot
mW
Storage Temperature
Tstg
ºC
Junction Temperature
Tj
ºC
Operating Ambient Temperature
Tamb
ºC
THERMAL RESISTANCE
From junction to ambient
*Rth (j-a)
K/W
*Sot-323 standard mounting condition
ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
Collector Cut Off Current
ICBO
VCB=30V, IE=0
15
nA
VCB=30V, IE=0, Tj=150 ºC
4
µA
Emitter Cut Off Current
IEBO
VEB=5V, IC=0
100
nA
BC856W_BC858W Rev170210E
- 65 to +150
150
- 65 to +150
625
100
200
200
200
BC858W
30
30
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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