PNP SILICON PLANAR TRANSISTOR

BC477

TO-18

General Purpose Audio Amplifier

ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Emitter Voltage

VCES

90

V

Collector -Emitter Voltage

VCEO

80

V

Emitter Base Voltage

VEBO

6.0

V

Collector Current

IC

150

mA

Power Dissipation @ Ta=25 deg C

Ptot

0.3

@ Tc=25 deg C

1.20

Junction Temperature

Tj

200

deg C

Storage Temperature Range

Tstg

-55 to 200

deg C

Thermal Resistance

Junction to Case

Rth (j-c)

146

deg C/W

Junction to Ambient

Rth (j-a)

485

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Cut off Current

ICES

VCE=70V,

VBE=0

-

-

10

nA

Ta=125 deg C

VCE=70V,

VBE=0

-

-

10

uA

Emitter Cut off Current

IEBO

VEB=4V,

IC=0

-

-

10

nA

Collector -Emitter Voltage

VCES

IC=10uA,

VBE=0

90

-

V

VCEO

IC=5mA,

IB=0

80

-

-

V

Emitter Base Voltage

VEBO

IE=10uA, IC=0

6.0

-

-

V

Collector Emitter Saturation Voltage

VCE(Sat) *

IC=10mA, IB=0.5mA

-

-

0.25

V

IC=100mA, IB=5mA

typ 0.3

V

Base Emitter on Voltage

VBE(on)*

IC=2mA,VCE=5V

0.55

0.75

V

Base Emitter Saturation Voltage

VBE(Sat) *

IC=10mA, IB=0.5mA

-

-

0.90

V

IC=100mA, IB=5mA

typ 0.90

V

DC Current Gain

hFE*

IC=10uA,VCE=5V

30

-

-

IC=2mA,VCE=5V

110

-

250

IC=10mA,VCE=5V

typ 160

Small Signal Current Gain

hfe

IC=2mA,VCE=5V,f=1kHz

125

260

IC=10mA,VCE=5V,f=20MHz

typ 7.5

DYNAMIC CHARACTERISTICS

Collector Base Capacitance

Ccbo

IE=0, VCB=5V

-

-

6.0

pF

Emitter Base Capacitance

Cebo

IC=0, VEB=0.5V

-

15

pF

Noise Figure

NF

VCE=5V, IC=200uA,

-

10

dB

Rg=2 kohms, f=1KHz

B=200Hz

*Pulsed: pulse duration =300us, duty cycle=1%

Continental Device India Limited

Data Sheet

Page 1 of 2

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company