PNP SILICON PLANAR EPITAXIAL TRANSISTOR

BC369

TO-92

BCE

Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF

Applications, Suitable for Class-B Audio Output Stages up to 3W

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Emitter Voltage

VCES

25

V

Collector -Emitter Voltage

VCEO

20

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current

IC

1.0

A

Collector Current Peak Value

ICM

2.0

A

Base Current

IB

100

mA

Base Current Peak Value

IBM

200

mA

Power Dissipation @ Ta=25 deg C

PTA

0.8

W

@ Tc=25 deg C

PTC

1.0

W

Junction Temperature

Tj

150

deg C

Storage Temperature Range

Tstg

-65 to +150

deg C

Thermal Resistance

Junction to Ambient in Free Air

Rth (j-a)

156

deg C/W

Junction to Ambient *

Rth (j-a)

125

deg C/W

Junction to Case

Rth (j-c)

60

deg C/W

*Mounted on printed-circuit board , maximum lead length 4mm, mounting

pad for collector lead min 10 mm x10 mm

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Cut- off Current

ICBO

IE=0, VCB=25V

-

-

10

uA

-

Tj=150 deg C

IE=0, VCB=25V

-

-

1.0

mA

Emitter Cut- off Current

IEBO

VEB=5V, IC=0

-

-

10

uA

Base- Emitter on Voltage

VBE(on)

IC=5mA, VCE=10V

-

0.7

V

IC=1A, VCE=1V

-

1.0

V

Collector- Emitter Saturation Voltage

VCE(Sat)

IC=1A, IB=100mA

-

-

0.5

V

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company