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BC317 Datasheet(PDF) 1 Page - Continental Device India Limited |
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BC317 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 5 page  NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION UNITS Collector Emitter Voltage V Collector Base Voltage V Emitter Base Voltage V Collector Current mA Power Dissipation @ Ta=25ºC mW Derate Above 25ºC mW/ºC Power Dissipation @ Tc=25ºC W Derate Above 25ºC mW/ºC Operating and Storage Junction Temperature Range ºC THERMAL CHARACTERISTICS Junction to Case ºC/W Junction to Ambient in free air ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Emitter Voltage VCEO IC=1mA, IB=0 45 V Collector Emitter Voltage VCES IC=100µA, VBE=0 50 V Collector Base Voltage VCBO IC=100µA, IE=0 50 V Emitter Base Voltage VEBO IE=100µA, IC=0 6.0 V Collector Cut off Current ICBO VCB=20V, IE = 0 30 nA Emitter Cut off Current IEBO VEB=4V, IC = 0 15 nA Base Emitter On Voltage VBE (on) IC=2mA, VCE=5V 0.57 0.72 V IC=10mA, VCE=5V 0.77 V Collector Emitter Saturation Voltage VCE (sat) IC=100mA, IB=5mA 0.60 V Base Emitter Saturation Voltage VBE (sat) IC=10mA, IB=0.5mA 0.70 V IC=100mA, IB=5mA 0.85 V DC Current Gain hFE IC=10µA, VCE=5V BC317A 90 BC317B 40 IC=2mA, VCE=5V BC317 110 450 BC317A 110 220 BC317B 200 450 BC317_A_B_Rev220103E PD PD 1.0 350 2.8 150 SYMBOL VCBO VEBO VCEO IC VALUE 45 50 6.0 8.0 - 55 to +150 Tj, Tstg Rth (j-a) 125 357 Rth (j-c) E B C Continental Device India Limited Data Sheet Page 1 of 5 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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