STF3LN62K3 datasheet(4/21 Pages) STMICROELECTRONICS

4 / 21 page

Electrical characteristics

STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3

4/21

Doc ID 18452 Rev 1

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

620

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3.75

4.5

RDS(on

Static drain-source on

resistance

VGS = 10 V, ID = 1.25 A

2.5

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

386

Co(tr)

(1)

Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS

Eq. capacitance time

VGS = 0, VDS = 0 to 496 V

-20-

Co(er)

(2)

Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as

Coss when VDS increases from 0 to 80% VDSS

Eq. capacitance

energy related

-28-

Intrinsic gate

resistance

f = 1 MHz open drain

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 496 V, ID = 2.5 A,

VGS = 10 V

(see

Figure 20)

2.7

10.7

STF3LN62K3 Datasheet(PDF) 4 Page - STMicroelectronics

STF3LN62K3 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

Datasheet Download

Link URL