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STP110N55F6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP110N55F6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 11 page ![]() Preliminary data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. July 2011 Doc ID 019059 Rev 1 1/11 11 STP110N55F6 N-channel 55 V, 4.3 m Ω, 110 A TO-220 STripFET™ VI DeepGATE™ Power MOSFET Features ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Order code VDSS RDS(on) max ID STP110N55F6 55 V < 5.2 m Ω 110 A TO-220 1 2 3 Table 1. Device summary Order code Marking Package Packaging STP110N55F6 110N55F6 TO-220 Tube www.st.com |
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