Data Sheet

50V N-Channel MOSFET

AF15N50

Aug. 2013

Rev. 1. 0

BCD Semiconductor Manufacturing Limited

4

Recommended Operating Conditions

Parameter

Symbol

Condition

Value

Unit

Thermal Resistance (Note 2)



JA

Junction to

Ambient

50

C/W

Thermal Resistance



Junction to Case

4

C/W

Note 2: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square pad.

Electrical Characteristics

Static Characteristics

Parameters

Symbol

Conditions

Min

Typ

Max

Unit

Drain

to

Source

Breakdown Voltage

50

V

Gate Threshold Voltage

0.5

0.9

2

V

Zero

Gate

Voltage

Drain Current

1

A

Gate

to

Source

Leakage Current

±10

A

Drain

to

Source

On-state Resistance

10

14.32

20

m



12

16.36

30