SI1022R datasheet(1/8 Pages) VISHAY

Part #	SI1022R

Description	N-Channel 60 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si1022R

Document Number: 71331

S10-2687-Rev. F, 22-Nov-10

www.vishay.com

1

N-Channel 60 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFETs

•

Low On-Resistance: 1.25



•

Low Threshold: 2.5 V

•

Low Input Capacitance: 30 pF

•

Fast Switching Speed: 25 ns

•

Low Input and Output Leakage

•

Miniature Package

•

ESD Protected: 2000 V

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

•

Battery Operated Systems

•

Solid State Relays

BENEFITS

•

Low Offset Voltage

•

Low-Voltage Operation

•

High-Speed Circuits

•

Low Error Voltage

•

Small Board Area

PRODUCT SUMMARY

VDS(min.) (V)

RDS(on) ()VGS(th) (V)

ID (mA)

60

1.25 at VGS = 10 V

1 to 2.5

330

Notes:

a. Surface mounted on FR4 board, power applied for t

 10 s.

Marking Code: E

SC-75A

(SOT-416)

1

2

3

G

S

D

Ordering Information: Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Currenta

TA = 25 °C

ID

330

mA

TA = 85 °C

240

Pulsed Drain Currenta

IDM

650

Power Dissipationa

TA = 25 °C

PD

250

mW

TA = 85 °C

130

Thermal Resistance, Maximum Junction-to-Ambienta

RthJA

500

°C/W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

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