PMPB12UN datasheet(6/15 Pages) PHILIPS

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NXP Semiconductors

PMPB12UN

20 V single N-channel Trench MOSFET

PMPB12UN

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Product data sheet

6 July 2012

6 / 15

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VGS = 8 V; VDS = 0 V; Tj = 25 °C

100

IGSS

gate leakage current

VGS = -8 V; VDS = 0 V; Tj = 25 °C

100

VGS = 4.5 V; ID = 7.9 A; Tj = 25 °C

mΩ

VGS = 4.5 V; ID = 7.9 A; Tj = 150 °C

mΩ

VGS = 2.5 V; ID = 3.5 A; Tj = 25 °C

mΩ

RDSon

drain-source on-state

resistance

VGS = 1.8 V; ID = 3.5 A; Tj = 25 °C

mΩ

gfs

forward

transconductance

VDS = 10 V; ID = 7.9 A; Tj = 25 °C

gate resistance

f = 1 MHz

1.4

Dynamic characteristics

QG(tot)

total gate charge

8.8

QGS

gate-source charge

QGD

gate-drain charge

VDS = 10 V; ID = 6 A; VGS = 4.5 V;

Tj = 25 °C

2.2

Ciss

input capacitance

886

Coss

output capacitance

233

Crss

reverse transfer

capacitance

VDS = 10 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

129

td(on)

turn-on delay time

rise time

td(off)

turn-off delay time

fall time

VDS = 10 V; ID = 6 A; VGS = 4.5 V;

RG(ext) = 6 Ω; Tj = 25 °C

Source-drain diode

VSD

source-drain voltage

IS = 1.8 A; VGS = 0 V; Tj = 25 °C

0.6

1.2

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