2DA1971 datasheet(4/7 Pages) DIODES

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2DA1971

Document number: DS35669 Rev: 2 – 2

4 of 7

www.diodes.com

August 2012

2DA1971

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-400

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 8)

BVCEO

-400

IC = -1mA

Emitter-Base Breakdown Voltage

BVEBO

-7

IE = -100µA

Collector-Emitter Cut-off Current

ICES

-100

VCE = -320V

Collector Cut-off Current

ICBO

-100

VCB = -320V

Emitter Cut-off Current

IEBO

-100

VEB = -6V

Static Forward Current Transfer Ratio (Note 8)

hFE

140

450

400

IC = -20mA, VCE = -5V

IC = -100mA, VCE = -5V

Collector-Emitter saturation Voltage (Note 8)

VCE(sat)

-250

IC = -100mA, IB = -10mA

-400

IC = -200mA, IB = -40mA

Base-Emitter saturation Voltage (Note 8)

VBE(sat)

-0.75

-0.9

IC = -100mA, IB = -10mA

Base-Emitter Turn-On Current (Note 8)

VBE(on)

-0.8

IC = -200mA, VCE = -10V

Transition frequency

MHz

IC = -50mA, VCE = -5V,

f = 50MHz

Collector Output Capacitance

Cobo

VCB = -10V, IE = 0, f = 1MHz

Delay Time

t(d)

VCC = -200V, IC = -100mA,

IB1 = -10mA, IB2 = 20mA

Rise Time

t(r)

111

Storage Time

t(s)

2165

Fall Time

t(f)

185

Notes:

8. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%

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