ZXT2M322 datasheet(4/6 Pages) DIODES

4 / 6 page

ZXT2M322

ISSUE 3 - JANUARY 2007

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO

-25

-35

IC=-100 A

Collector-Emitter Breakdown

Voltage

V(BR)CEO

-20

-25

IC=-10mA*

Emitter-Base Breakdown Voltage

V(BR)EBO

-7.5

-8.5

IE=-100 A

Collector Cut-Off Current

ICBO

-25

VCB=-20V

Emitter Cut-Off Current

IEBO

-25

VEB=-6V

Collector Emitter Cut-Off Current

ICES

-25

VCES=-16V

Collector-Emitter Saturation

Voltage

VCE(sat)

-19

-170

-190

-240

-225

-30

-220

-250

-350

-300

IC=-0.1A, IB=-10mA*

IC=-1A, IB=-20mA*

IC=-1.5A, IB=-50mA*

IC=-2.5A, IB=-150mA*

IC=-3.5A, IB=-350mA*

Base-Emitter Saturation Voltage

VBE(sat)

-1.01

-1.075

IC=-3.5A, IB=-350mA*

Base-Emitter Turn-On Voltage

VBE(on)

-0.87

-0.95

IC=-3.5A, VCE=-2V*

Static Forward Current Transfer

Ratio

hFE

300

150

475

450

230

IC=-10mA, VCE=-2V*

IC=-0.1A, VCE=-2V*

IC=-2A, VCE=-2V*

IC=-6A, VCE=-2V*

Transition Frequency

150

180

MHz

IC=-50mA, VCE=-10V

f=100MHz

Output Capacitance

Cobo

VCB=-10V, f=1MHz

Turn-On Time

t(on)

VCC=-10V, IC=-1A

IB1=IB2=10mA

Turn-Off Time

t(off)

670

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

OBSOLETE - PLEASE USE ZXTP718MA

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